CUED Publications database

Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

Wang, X and Wang, Z and Zhang, J and Wang, X and Zhang, Z and Wang, J and Zhu, Z and Li, Z and Liu, Y and Hu, X and Qiu, J and Hu, G and Chen, B and Wang, N and He, Q and Chen, J and Yan, J and Zhang, W and Hasan, T and Li, S and Li, H and Zhang, H and Wang, Q and Huang, X and Huang, W (2018) Realization of vertical metal semiconductor heterostructures via solution phase epitaxy. Nature Communications, 9. 3611-. ISSN 2041-1723

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© 2018, The Author(s). The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS2and 1T-WS2induces a charge redistribution in Sn and W to realize metallic Sn0.5W0.5S2nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS2nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn0.5W0.5S2/SnS2heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100 ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors.

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 01 Aug 2018 20:46
Last Modified: 02 Mar 2021 09:28
DOI: 10.1038/s41467-018-06053-z