CUED Publications database

Highly Efficient Thin-Film Transistor via Cross-Linking of 1T Edge Functional 2H Molybdenum Disulfides.

Lee, H and Bak, S and An, S-J and Kim, JH and Yun, E and Kim, M and Seo, S and Jeong, MS and Lee, H (2017) Highly Efficient Thin-Film Transistor via Cross-Linking of 1T Edge Functional 2H Molybdenum Disulfides. ACS Nano, 11. pp. 12832-12839. ISSN 1936-0851

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Abstract

Thin-film transistors (TFTs) have received great attention for their use in lightweight, large area, and wearable devices. However, low crystalline materials and inhomogeneous film formation limit the realization of high-quality electrical properties for channels in commercial TFTs, especially for flexible electronics. Here, we report a field-effect TFT fabricated via cross-linking of edge-1T basal-2H MoS2 sheets that are prepared by edge functional exfoliation of bulk MoS2 with soft organic exfoliation reagents. For edge functional exfoliation, the electrophilic 4-carboxy-benzenediazonium used as the soft organic reagent attacks the nucleophilic thiolates exposed at the edge of the bulk MoS2 with the help of an amine catalyst, resulting in 1T edge-functional HOOC-benzene-2H basal MoS2 nanosheets (e-MoS2). The cross-linking via hydrogen bonding of the negatively charged HOOC of the e-MoS2 sheets with the help of a cationic polymer, polydiallyldimethylammonium chloride, results in a good film formation for a channel of the solution processing TFT. The TFT exhibits an extremely high mobility of 170 cm2/(V s) at 1 V (on/off ratio of 106) on SiO2/Si substrate and also a high mobility of 36.34 cm2/(V s) (on/off ratio of 103) on PDMS/PET substrate.

Item Type: Article
Uncontrolled Keywords: exfoliation field-effect transistor flexible electronics functionalization molybdenum disulfides transition-metal dichalcogenides
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 24 Oct 2018 20:27
Last Modified: 13 Apr 2021 07:28
DOI: 10.1021/acsnano.7b07776