CUED Publications database

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Lee, J and Pak, S and Lee, YW and Cho, Y and Hong, J and Giraud, P and Shin, HS and Morris, SM and Sohn, JI and Cha, SN and Kim, JM (2017) Monolayer optical memory cells based on artificial trap-mediated charge storage and release. Nature Communications, 8. 14734-.

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Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS 2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ∼4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 10 4 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices.

Item Type: Article
Depositing User: Cron Job
Date Deposited: 20 Nov 2018 01:29
Last Modified: 16 Apr 2021 20:15
DOI: 10.1038/ncomms14734