CUED Publications database

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Yang, Y and Huo, S and Jiang, LH and Kong, YC and Chen, TS and Zhou, H and Teh, AS and Butler, T and Hasko, D and Amaratunga, GA (2018) Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor. In: UNSPECIFIED.

Full text not available from this repository.

Abstract

A novel device structure that combines field emission and field effect transistor (FET) on a laterally grown individual semiconducting singlewalled carbon nanotube (SWNT) is proposed and realized. The SWNT serves as both the channel of the FET and the field emitter. The emission current is restricted to the supply current from the FET and hence subject to the gate modulation. The bias conditions on either device are self-adaptive to satisfy current continuity. The measurement results demonstrate good emission current stability and effective gate control over the emission characteristics. This novel type of device could establish a new approach to develop miniaturized field emission devices with superior characteristics for chip-level integration.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 27 Sep 2019 20:50
Last Modified: 15 Apr 2021 06:08
DOI: 10.1109/EDSSC.2018.8487091