CUED Publications database

Effect of the intermediate sulfide layer on the Cu<inf>2</inf>ZnSnS<inf>4</inf>-based solar cells

Yu, SM and Lim, KS and Shin, DW and Oh, TS and Yoo, JB (2017) Effect of the intermediate sulfide layer on the Cu<inf>2</inf>ZnSnS<inf>4</inf>-based solar cells. Journal of Materials Science: Materials in Electronics, 28. pp. 5696-5702. ISSN 0957-4522

Full text not available from this repository.

Abstract

Cu ZnSnS (CZTS) thin-film solar cells were fabricated using Cu/Sn/Zn and Cu/SnS/Zn precursors. The precursors were prepared using a magnetron-sputtering system with subsequent annealing (sulfurization) in a sulfur atmosphere. Sulfurization was carried out at 580 °C for 1 h in an H S/N environment at atmospheric pressure. The growth behavior of CZTS thin films with different precursors during sulfurization was investigated and their properties were analyzed using X-ray diffraction, scanning electron microscopy with energy-dispersive spectroscopy, and Raman spectroscopy. The CZTS thin film sulfurized using the Cu/Sn/Zn metallic precursor exhibited inhomogeneous growth with detrimental secondary phases, including Cu S and ZnS, resulting in significant degradation in V , J and FF. In contrast, the CZTS thin film formed using a Cu/SnS/Zn precursor showed uniform growth without secondary phases on the surface and 4.1% power conversion efficiency, which was greater than that of the solar cell formed with the metallic precursor. 2 4 2 2 2 oc sc

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 18 Mar 2019 20:06
Last Modified: 01 Apr 2021 04:50
DOI: 10.1007/s10854-016-6241-3