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General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

Xia, C and Li, P and Li, J and Jiang, Q and Zhang, X and Alshareef, HN (2017) General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices. Chemistry of Materials, 29. pp. 690-698. ISSN 0897-4756

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We demonstrate a versatile top-down ion exchange process, done at ambient temperature, to form epitaxial chalcogenide films and devices, with nanometer scale thickness control. To demonstrate the versatility of our process we have synthesized (1) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo S thin films prepared by our process show 115 times higher mobility than NiCo S pellets (23 vs 0.2 cm V s ) prepared by previous reports. By controlling the ion exchange process time, we made free-standing epitaxial films of NiCo S and transferred them onto different substrates. We also demonstrate in situ formation of atomically sharp, lateral Schottky diodes based on NiCo O /NiCo S heterojunction, using a single ion exchange step. Additionally, we show that our approach can be easily extended to other chalcogenide semiconductors. Specifically, we used our process to prepare Cu S thin films with mobility that matches single crystal Cu S (25 cm V s ), which is ca. 28 times higher than the previously reported Cu S thin film mobility (0.58 cm V s ), thus demonstrating the universal nature of our process. This is the first report in which chalcogenide thin films retain the epitaxial nature of the precursor oxide films, an approach that will be useful in many applications. 2 4 2 4 2 4 2 4 2 4 1.8 1.8 1.8 2 -1 -1 2 -1 -1 2 -1 -1

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 24 Jun 2019 20:26
Last Modified: 01 Apr 2021 04:49
DOI: 10.1021/acs.chemmater.6b04319