First Demonstration of a Fully-Printed Mos2Rram on Flexible Substrate with Ultra-Low Switching Voltage and its Application as Electronic Synapse

Feng, X and Li, Y and Wang, L and Yu, ZG and Chen, S and Tan, WC and MacAdam, N and Hu, G and Gong, X and Hasan, T and Zhang, YW and Thean, AVY and Ang, KW (2019) First Demonstration of a Fully-Printed Mos2Rram on Flexible Substrate with Ultra-Low Switching Voltage and its Application as Electronic Synapse. In: UNSPECIFIED T88-T89..

Abstract

© 2019 The Japan Society of Applied Physics. We demonstrate the first fully-printed resistive random access memory (RRAM) on flexible substrate using 2D layered dichalcogenides, exhibiting ultra-low switching voltage down to 0.18 V and an on/off ratio up to 107. The novel switching medium is printed by formulating multilayer molybdenum disulfide (MoS2) into 3D-printable ink. Both volatile and non-volatile resistive switching are achieved within a single device by varying current compliance, which enables the implementation of electronic synapse with neuromorphic functionality including short-term plasticity (STP) and long-term plasticity (LTP).