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A Fully Printed Flexible MoS<inf>2</inf> Memristive Artificial Synapse with Femtojoule Switching Energy

Feng, X and Li, Y and Wang, L and Chen, S and Yu, ZG and Tan, WC and Macadam, N and Hu, G and Huang, L and Chen, L and Gong, X and Chi, D and Hasan, T and Thean, AVY and Zhang, YW and Ang, KW (2019) A Fully Printed Flexible MoS<inf>2</inf> Memristive Artificial Synapse with Femtojoule Switching Energy. Advanced Electronic Materials, 5.

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Abstract

© 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Realization of memristors capable of storing and processing data on flexible substrates is a key enabling technology toward “system-on-plastics”. Recent advancements in printing techniques show enormous potential to overcome the major challenges of the current manufacturing processes that require high temperature and planar topography, which may radically change the system integration approach on flexible substrates. However, fully printed memristors are yet to be successfully demonstrated due to the lack of a robust printable switching medium and a reliable printing process. An aerosol-jet-printed Ag/MoS2/Ag memristor is realized in a cross-bar structure by developing a scalable and low temperature printing technique utilizing a functional molybdenum disulfide (MoS2) ink platform. The fully printed devices exhibit an ultra-low switching voltage (0.18 V), a high switching ratio (107), a wide range of tuneable resistance states (10–1010 Ω) for multi-bit data storage, and a low standby power consumption of 1 fW and a switching energy of 4.5 fJ per transition set. Moreover, the MoS2 memristor exhibits both volatile and non-volatile resistive switching behavior by controlling the current compliance levels, which efficiently mimic the short-term and long-term plasticity of biological synapses, demonstrating its potential to enable energy-efficient artificial neuromorphic computing.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 03 Sep 2019 03:25
Last Modified: 25 Jun 2020 10:26
DOI: 10.1002/aelm.201900740