CUED Publications database

Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography.

Wyatt-Moon, G and Georgiadou, DG and Semple, J and Anthopoulos, TD (2017) Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography. ACS Appl Mater Interfaces, 9. pp. 41965-41972.

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Abstract

Adhesion lithography (a-Lith) is a versatile fabrication technique used to produce asymmetric coplanar electrodes separated by a <15 nm nanogap. Here, we use a-Lith to fabricate deep ultraviolet (DUV) photodetectors by combining coplanar asymmetric nanogap electrode architectures (Au/Al) with solution-processable wide-band-gap (3.5-3.9 eV) p-type semiconductor copper(I) thiocyanate (CuSCN). Because of the device's unique architecture, the detectors exhibit high responsivity (≈79 A W-1) and photosensitivity (≈720) when illuminated with a DUV-range (λpeak = 280 nm) light-emitting diode at 220 μW cm-2. Interestingly, the photosensitivity of the photodetectors remains fairly high (≈7) even at illuminating intensities down to 0.2 μW cm-2. The scalability of the a-Lith process combined with the unique properties of CuSCN paves the way to new forms of inexpensive, yet high-performance, photodetectors that can be manufactured on arbitrary substrate materials including plastic.

Item Type: Article
Uncontrolled Keywords: coplanar electrodes photodiode photosensitivity responsivity solution-processed
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 11 Nov 2019 20:10
Last Modified: 08 Apr 2021 05:52
DOI: 10.1021/acsami.7b12942