CUED Publications database

Waterproof Flexible InP@ZnSeS Quantum Dot Light-Emitting Diode

Shin, DW and Suh, YH and Lee, S and Hou, B and Han, SD and Cho, Y and Fan, XB and Bang, SY and Zhan, S and Yang, J and Choi, HW and Jung, S and Mocanu, FC and Lee, H and Occhipinti, L and Chun, YT and Amaratunga, G and Kim, JM (2020) Waterproof Flexible InP@ZnSeS Quantum Dot Light-Emitting Diode. Advanced Optical Materials, 8.

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The development of flexible displays for wearable electronics applications has created demand for high-performance quantum dot (QD) light-emitting diodes (QLEDs) based on QD core@shell structures. Emerging indium phosphide (InP)-based core@shell QDs show promise as lighting material in the field of optoelectronics because they are environmentally friendly material, can be produced in a cost-effective manner, and are capable of tunable emission. While efforts have been made to enhance the performance of InP-based QLED, the stabilities of InP@ZnSeS QDs film and InP@ZnSeS-based QLED in water/air are not yet fully understood, limiting their practical applications. Herein, a highly durable, flexible InP@ZnSeS QLED encapsulated in an ultrathin film of CYTOP, a solution-based amorphous fluoropolymer, is demonstrated. The CYTOP-encapsulated green flexible QLED shows an external quantum efficiency (EQE) of 0.904% and a high luminescence of 1593 cd m−2 as well as outstanding waterproof performance. The flexible device emits strong luminescence after being immersed in water for ≈20 min. Even when subjected to continuous tensile stress with a 5 mm bending radius, the high luminescence is preserved. This waterproof architecture can be a promising strategy for wearable electronics applications.

Item Type: Article
Depositing User: Unnamed user with email
Date Deposited: 18 Jan 2020 21:24
Last Modified: 09 Sep 2021 02:09
DOI: 10.1002/adom.201901362