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Thin film Gallium nitride (GaN) based acoustofluidic Tweezer: Modelling and microparticle manipulation

Sun, C and Wu, F and Fu, Y and Wallis, DJ and Mikhaylov, R and Yuan, F and Liang, D and Xie, Z and Wang, H and Tao, R and Shen, MH and Yang, J and Xun, W and Wu, Z and Yang, Z and Cang, H and Yang, X (2020) Thin film Gallium nitride (GaN) based acoustofluidic Tweezer: Modelling and microparticle manipulation. Ultrasonics, 108. 106202-. ISSN 0041-624X

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Gallium nitride (GaN) is a compound semiconductor which shows advantages in new functionalities and applications due to its piezoelectric, optoelectronic, and piezo-resistive properties. This study develops a thin film GaN-based acoustic tweezer (GaNAT) using surface acoustic waves (SAWs) and demonstrates its acoustofluidic ability to pattern and manipulate microparticles. Although the piezoelectric performance of the GaNAT is compromised compared with conventional lithium niobate-based SAW devices, the inherited properties of GaN allow higher input powers and superior thermal stability. This study shows for the first time that thin film GaN is suitable for the fabrication of the acoustofluidic devices to manipulate microparticles with excellent performance. Numerical modelling of the acoustic pressure fields and the trajectories of mixtures of microparticles driven by the GaNAT was performed and the results were verified from the experimental studies using samples of polystyrene microspheres. The work has proved the robustness of thin film GaN as a candidate material to develop high-power acoustic tweezers, with the potential of monolithical integration with electronics to offer diverse microsystem applications.

Item Type: Article
Uncontrolled Keywords: GaN Microfluidics Particle manipulation SAW Thin film
Depositing User: Unnamed user with email
Date Deposited: 05 Jun 2020 20:22
Last Modified: 09 Sep 2021 02:08
DOI: 10.1016/j.ultras.2020.106202