CUED Publications database

Comparison between schottky diodes with oxide ramp termination on silicon carbide and diamond

Brezeanu, G and Brezeanu, M and Udrea, F and Amaratunga, G and Boianceanu, C and Badila, M and Zekentes, K and Visoreanu, A (2007) Comparison between schottky diodes with oxide ramp termination on silicon carbide and diamond. In: UNSPECIFIED pp. 865-868..

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Abstract

A classical implementation of the field plate technique is the oxide ramp termination. This paper presents for the first time a comparison between SiC and diamond Schottky barrier diodes (SBD) using this termination. The influences of the ramp angle and oxide thickness on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures. The efficiency of the termination is also evaluated.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 23 Sep 2020 21:13
Last Modified: 18 Feb 2021 15:24
DOI: 10.4028/0-87849-442-1.865