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Robust In-Zn-O Thin-Film Transistors with a Bilayer Heterostructure Design and a Low-Temperature Fabrication Process Using Vacuum and Solution Deposited Layers

Bang, SY and Mocanu, FC and Lee, TH and Yang, J and Zhan, S and Jung, SM and Shin, DW and Suh, YH and Fan, XB and Lee, S and Choi, HW and Occhipinti, LG and Han, SD and Kim, JM (2020) Robust In-Zn-O Thin-Film Transistors with a Bilayer Heterostructure Design and a Low-Temperature Fabrication Process Using Vacuum and Solution Deposited Layers. ACS Omega, 5. pp. 21593-21601.

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Abstract

We report on the design, fabrication, and characterization of heterostructure In-Zn-O (IZO) thin-film transistors (TFTs) with improved performance characteristics and robust operation. The heterostructure layer is fabricated by stacking a solution-processed IZO film on top of a buffer layer, which is deposited previously using an electron beam (e-beam) evaporator. A thin buffer layer at the dielectric interface can help to template the structure of the channel. The control of the precursors and of the solvent used during the sol-gel process can help lower the temperature needed for the sol-gel condensation reaction to proceed cleanly. This boosts the overall performance of the device with a significantly reduced subthreshold swing, a four-fold mobility increase, and a two-order of magnitude larger on/off ratio. Atomistic simulations of the a-IZO structure using molecular dynamics (both classical and ab initio) and hybrid density functional theory (DFT) calculations of the electronic structure reveal the potential atomic origin of these effects.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 30 Jul 2020 02:44
Last Modified: 07 Sep 2021 02:10
DOI: 10.1021/acsomega.0c02225