CUED Publications database

Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices

Ippolito, S and Kelly, AG and Furlan de Oliveira, R and Stoeckel, MA and Iglesias, D and Roy, A and Downing, C and Bian, Z and Lombardi, L and Samad, YA and Nicolosi, V and Ferrari, AC and Coleman, JN and Samorì, P (2021) Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices. Nature Nanotechnology. ISSN 1748-3387

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Abstract

Solution-processed semiconducting transition metal dichalcogenides are at the centre of an ever-increasing research effort in printed (opto)electronics. However, device performance is limited by structural defects resulting from the exfoliation process and poor inter-flake electronic connectivity. Here, we report a new molecular strategy to boost the electrical performance of transition metal dichalcogenide-based devices via the use of dithiolated conjugated molecules, to simultaneously heal sulfur vacancies in solution-processed transition metal disulfides and covalently bridge adjacent flakes, thereby promoting percolation pathways for the charge transport. We achieve a reproducible increase by one order of magnitude in field-effect mobility (µ ), current ratio (I /I ) and switching time (τ ) for liquid-gated transistors, reaching 10 cm V s , 10 and 18 ms, respectively. Our functionalization strategy is a universal route to simultaneously enhance the electronic connectivity in transition metal disulfide networks and tailor on demand their physicochemical properties according to the envisioned applications. FE ON OFF S −2 2 −1 −1 4

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 15 Jan 2021 22:22
Last Modified: 13 Apr 2021 09:45
DOI: 10.1038/s41565-021-00857-9