CUED Publications database

Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices

Tang, G and Wei, J and Zhang, Z and Tang, X and Hua, M and Wang, H and Chen, KJ (2017) Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices. In: UNSPECIFIED pp. 235-238..

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Abstract

Dynamic ON-resistance (äon) behaviors of 600-V GaN-on-Si lateral power devices with grounded and floating substrate termination are studied. It is found that the floating substrate termination not only enables higher OFF-state breakdown voltage, but also delivers the benefit of smaller dynamic R degradation under higher drain bias (> 400 V) switching operations. Under medium drain bias (< 300 V) switching, a moderately larger dynamic R degradation is resulted from a floating substrate. The underlying physical mechanisms are explained by charge storage in the Si substrate and electron trapping effect in the GaN buffer layer. on on

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 25 Jan 2021 20:04
Last Modified: 13 Apr 2021 09:43
DOI: doi:10.23919/ISPSD.2017.7988920