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Dynamic RON of GaN-on-Si lateral power devices with a floating substrate termination

Tang, G and Wei, J and Zhang, Z and Tang, X and Hua, M and Wang, H and Chen, KJ (2017) Dynamic RON of GaN-on-Si lateral power devices with a floating substrate termination. IEEE Electron Device Letters, 38. pp. 937-940. ISSN 0741-3106

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Abstract

Dynamic ON-resistance (RON) of 650-V GaN-on-Si lateral power deviceswith a floating Si-substrate termination is investigated. Compared with the grounded substrate termination, the floating substrate could deliver smaller dynamic RON under higher drain bias (> 400 V) switching operation, but leads to larger dynamic RON under low-drain bias (< 400 V). The underlying physical mechanisms are explained by the tradeoff between charge storage in the Si substrate and electron trapping effect in the GaN buffer layer.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 25 Jan 2021 20:04
Last Modified: 15 Apr 2021 06:04
DOI: 10.1109/LED.2017.2707529