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Remote N<inf>2</inf> plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS<inf>2</inf> MOSFET

Qian, Q and Zhang, Z and Hua, M and Wei, J and Lei, J and Chen, KJ (2017) Remote N<inf>2</inf> plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS<inf>2</inf> MOSFET. Applied Physics Express, 10. ISSN 1882-0778

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Abstract

Remote N plasma treatment is explored as a surface functionalization technique to deposit ultrathin high-k dielectric on single-layer MoS . The ultrathin dielectric is used as a tunneling contact layer, which also serves as an interfacial layer below the gate region for fabricating top-gate MoS metal-oxide-semiconductor field-effect transistors (MOSFETs). The fabricated devices exhibited small hysteresis and mobility as high as 14 cm •V •s . The contact resistance was significantly reduced, which resulted in the increase of drain current from 20 to 56 μA/μm. The contact resistance reduction can be attributed to the alleviated metal-MoS interface reaction and the preserved conductivity of MoS below the source/drain metal contact. 2 2 2 2 2 2 -1 -1

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 25 Jan 2021 20:04
Last Modified: 10 Apr 2021 01:46
DOI: 10.7567/APEX.10.125201