CUED Publications database

Nitridation of GaN surface for power device application: A first-principles study

Zhang, Z and Li, B and Tang, X and Qian, Q and Hua, M and Huang, B and Chen, KJ (2017) Nitridation of GaN surface for power device application: A first-principles study. In: UNSPECIFIED 36.2.1-36.2.4..

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Abstract

The nitridation effects on GaN surface are dissected by first-principles calculations and manifested by photoemission (XPS/UPS) measurements. Two surface bands (upper- and lower-band) are found within the bandgap for several surface configurations. With sufficient nitridation, the energy levels of both bands are shifted towards the valence band, leading to a merge of the lower band with the valence band. The modification to the energy levels of the surface bands is experimentally verified by XPS/UPS analysis performed on GaN surface treated by low-energy N plasma. The surface state modification explains the significantly improved interface quality in GaN MIS- and MOS-structures featuring nitridation interfacial layer, and also supports a physical model that explains the GaN band-edge emission in forward biased metal-AlGaN/GaN Schottky heterojunction. 2

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 25 Jan 2021 20:04
Last Modified: 13 Apr 2021 09:43
DOI: 10.1109/IEDM.2016.7838552