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Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si<inf>3</inf>N<inf>4</inf> as Passivation and Post Gate-Recess Channel Protection Layers

Liu, S and Wang, M and Tao, M and Yin, R and Gao, J and Sun, H and Lin, W and Wen, CP and Wang, J and Wu, W and Hao, Y and Zhang, Z and Chen, KJ and Shen, B (2017) Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si<inf>3</inf>N<inf>4</inf> as Passivation and Post Gate-Recess Channel Protection Layers. IEEE Electron Device Letters, 38. pp. 1075-1078. ISSN 0741-3106

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Abstract

In this letter, a gate recessed normally-off GaN metal-oxide-semiconductor high-electron-mobility transistor on silicon substrate is fabricated using AlN/Si N as the passivation layer. The thin AlN layer serves the dual role of protecting the gate channel region from direct plasma bombardment during the RIE Si N removal and passivating the surface states in the access region. As a result, the effective carrier mobility in the normally-off channel is found to improve from the 568 cm /V · s in conventional Si N passivation process to a high value of 1154 cm /V · s. A saturated output current density of 603 mA/mm and an ON-resistance of 5.3Ω · mm was obtained for devices with L /L /L /W = 1.5/1.5/3/ 20μm. Meanwhile, the degradation of dynamic ON-resistance is significantly suppressed due to the effective passivation of surface states by the AlN layer grown by plasma-enhanced atomic layer deposition. 3 4 3 4 3 4 G GS GD G 2 2

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 25 Jan 2021 20:04
Last Modified: 15 Apr 2021 06:04
DOI: 10.1109/LED.2017.2718624