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Enhanced dielectric deposition on single-layer MoS<inf>2</inf> with low damage using remote N<inf>2</inf> plasma treatment

Qian, Q and Zhang, Z and Hua, M and Tang, G and Lei, J and Lan, F and Xu, Y and Yan, R and Chen, KJ (2017) Enhanced dielectric deposition on single-layer MoS<inf>2</inf> with low damage using remote N<inf>2</inf> plasma treatment. Nanotechnology, 28. 175202-. ISSN 0957-4484

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Abstract

Using remote N plasma treatment to promote dielectric deposition on the dangling-bond free MoS is explored for the first time. The N plasma induced damages are systematically studied by the defect-sensitive acoustic-phonon Raman of single-layer MoS , with samples undergoing O plasma treatment as a comparison. O plasma treatment causes defects in MoS mainly by oxidizing MoS along the already defective sites (most likely the flake edges), which results in the layer oxidation of MoS . In contrast, N plasma causes defects in MoS mainly by straining and mechanically distorting the MoS layers first. Owing to the relatively strong MoS -substrate interaction and chemical inertness of MoS in N plasma, single-layer MoS shows great stability in N plasma and only stable point defects are introduced after long-duration N plasma exposure. Considering the enormous vulnerability of single-layer MoS in O plasma and the excellent stability of single-layer MoS in N plasma, the remote N plasma treatment shows great advantage as surface functionalization to promote dielectric deposition on single-layer MoS . 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 25 Jan 2021 20:04
Last Modified: 13 Apr 2021 09:43
DOI: 10.1088/1361-6528/aa6756