Unalan, HE and Zhang, Y and Hiralal, P and Dalal, S and Chu, D and Eda, G and Teo, KBK and Chhowalla, M and Milne, WI and Amaratunga, GAJ (2009) Zinc oxide nanowire networks for macroelectronic devices. Applied Physics Letters, 94. ISSN 0003-6951Full text not available from this repository.
Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics. © 2009 American Institute of Physics.
|Divisions:||Div B > Photonics|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 23:02|
|Last Modified:||02 Mar 2015 01:30|