CUED Publications database

Evaluation of termination techniques for 4H-SiC PiN diodes and trench JFETs

Mihaila, AP and Udrea, F and Rashid, SJ and Amaratunga, GAJ and Kataoka, M and Takeuchi, Y and Malhan, RK (2007) Evaluation of termination techniques for 4H-SiC PiN diodes and trench JFETs. Materials Science Forum, 556-55. pp. 925-928. ISSN 0255-5476

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Abstract

An investigation concerning suitable termination techniques for 4H-SiC trench JFETs is presented. Field plates, p+ floating rings and junction termination extension techniques are used to terminate 1.2kV class PiN diodes. The fabricated PiN diodes evaluated here have a similar design to trench JFETs. Therefore, the conclusions for PiN diodes can be applied to JFET structures as well. Numerical simulations are also used to illustrate the effect of the terminations on the diodes' blocking mode behaviour.

Item Type: Article
Uncontrolled Keywords: Field plate Floating rings JTE PiN diodes
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:58
Last Modified: 26 Nov 2014 19:06
DOI: