Mihaila, AP and Udrea, F and Rashid, SJ and Amaratunga, GAJ and Kataoka, M and Takeuchi, Y and Malhan, RK (2007) Evaluation of termination techniques for 4H-SiC PiN diodes and trench JFETs. Materials Science Forum, 556-55. pp. 925-928. ISSN 0255-5476Full text not available from this repository.
An investigation concerning suitable termination techniques for 4H-SiC trench JFETs is presented. Field plates, p+ floating rings and junction termination extension techniques are used to terminate 1.2kV class PiN diodes. The fabricated PiN diodes evaluated here have a similar design to trench JFETs. Therefore, the conclusions for PiN diodes can be applied to JFET structures as well. Numerical simulations are also used to illustrate the effect of the terminations on the diodes' blocking mode behaviour.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||09 Dec 2016 17:49|
|Last Modified:||23 Feb 2017 05:20|