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Switching performance of epitaxially grown normally-off 4H-SiC JFET

Malhan, RK and Rashid, SJ and Kataoka, M and Takeuchi, Y and Sugiyama, N and Udrea, F and Amaratunga, GAJ and Reimann, T (2009) Switching performance of epitaxially grown normally-off 4H-SiC JFET. Materials Science Forum, 600-60. pp. 1067-1070. ISSN 0255-5476

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Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance R was 6-10mΩcm at V = 2.5V and the breakdown voltage between the range of 1.5-1.8kV was realized at V = -5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design. © (2009) Trans Tech Publications, Switzerland. on GS GS 2

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:04
Last Modified: 08 Apr 2021 06:27
DOI: 10.4028/3-908453-11-9.1067