Quarterman, AH and Wilcox, KG and Apostolopoulos, V and Mihoubi, Z and Barnes, M and Farrer, I and Ritchie, DA and Tropper, A (2010) Gain saturation in 60-fs mode-locked semiconductor laser. Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010.Full text not available from this repository.
A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation. © 2010 Optical Society of America.
|Divisions:||Div B > Photonics|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 23:10|
|Last Modified:||01 May 2015 18:40|