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Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

Wei, D and Zhang, Y and Yang, Y and Hasko, DG and Chu, D and Teo, KB and Amaratunga, GA and Milne, WI (2008) Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly. ACS Nano, 2. pp. 2526-2530.

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Abstract

We have fabricated single-walled carbon nanotube (SWNT) field effect transistors (FETs) with molybdenum source and drain contacts. Normally, these devices operate only as p-channel transistors, however, after polystyrene latex nanospheres were attached to the nanotubes close to the contacts, they changed to ambipolar operation. This strategy provides a simple method to modify the electrical behavior of unipolar SWNT-FETs by influencing the gate-channel electric field distribution and offset charge, so enabling complementary circuits to be fabricated.

Item Type: Article
Uncontrolled Keywords: Nanospheres Nanotubes, Carbon Polystyrenes Transistors, Electronic
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:44
Last Modified: 17 Mar 2014 14:29
DOI: 10.1021/nn800706v

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