Li, FM and Hsieh, GW and Dalal, S and Newton, MC and Stott, JE and Hiralal, P and Nathan, A and Warburton, PA and Unalan, HE and Beecher, P and Flewitt, AJ and Robinson, I and Amaratunga, G and Milne, WI (2008) Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors. IEEE Transactions on Electron Devices, 55. pp. 3001-3011. ISSN 0018-9383Full text not available from this repository.
This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm2V-1 s-1. representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 106 at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs. © 2008 IEEE.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||02 Sep 2016 16:41|
|Last Modified:||21 Oct 2016 22:08|