CUED Publications database

Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors

Li, FM and Hsieh, GW and Dalal, S and Newton, MC and Stott, JE and Hiralal, P and Nathan, A and Warburton, PA and Unalan, HE and Beecher, P and Flewitt, AJ and Robinson, I and Amaratunga, G and Milne, WI (2008) Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors. IEEE Transactions on Electron Devices, 55. pp. 3001-3011. ISSN 0018-9383

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This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C -butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm V s . representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 10 at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs. © 2008 IEEE. 61 2 -1 -1 6

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:19
Last Modified: 15 Apr 2021 06:07
DOI: 10.1109/TED.2008.2005180