Chen, CW and Robertson, J (1998) Nature of disorder and localization in amorphous carbon. Journal of Non-Crystalline Solids, 227-23. pp. 602-606. ISSN 0022-3093Full text not available from this repository.
The electronic structure of amorphous diamond-like carbon is studied. Analysis of the participation ratio shows that π states within the σ-σ* gap are localized. The localization arises from dihedral angle disorder. The localization of π states causes the mobility gap to exceed the optical gap, which accounts for the low carrier mobility and the flat photoluminesence excitation spectrum. © 1998 Elsevier Science B.V. All rights reserved.
|Uncontrolled Keywords:||Amorphous carbon Disorder Localization|
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:42|
|Last Modified:||08 Dec 2014 02:31|