Robertson, J and Chen, CW (1998) Electronic structure and surface properties of SrBi<inf>2</inf>Ta<inf>2</inf>O<inf>9</inf> and related oxides. Materials Research Society Symposium - Proceedings, 493. pp. 249-254. ISSN 0272-9172Full text not available from this repository.
The electronic structure of SrBi2Ta2O9 and related oxides such as SrBi2Nb2O9, Bi2WO6 and Bi3Ti4O12 have been calculated by the tight-binding method. In each case, the band gap is about 4.1 eV and the band edge states occur on the Bi-O layers and consist of mixed O p/Bi s states at the top of the valence band and Bi p states at the bottom of the conduction band. The main difference between the compounds is that Nb 5d and Ti 4d states in the Nb and Ti compounds lie lower than the Ta 6d states in the conduction band. The surface pinning levels are found to pin Schottky barriers 0.8 eV below the conduction band edge.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||09 Dec 2016 17:48|
|Last Modified:||16 Jan 2017 10:32|