CUED Publications database

Doping mechanism in tetrahedral amorphous carbon

Chen, CW and Robertson, J (1997) Doping mechanism in tetrahedral amorphous carbon. Materials Research Society Symposium - Proceedings, 498. pp. 31-36. ISSN 0272-9172

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Abstract

Doping in hydrogenated amorphous silicon occurs by a process of an ionised donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favoured because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:58
Last Modified: 26 Nov 2014 19:06
DOI: