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Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9

Robertson, J and Chen, CW and Warren, WL and Gutleben, CD (1996) Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9. Applied Physics Letters, 69. pp. 1704-1706. ISSN 0003-6951

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Abstract

The band structure of the layered perovskite SrBi2Ta2O9 (SBT) was calculated by tight binding and the valence band density of states was measured by x-ray photoemission spectroscopy. We find both the valence and conduction band edges to consist of states primarily derived from the Bi-O layer rather than the perovskite Sr-Ta-O blocks. The valence band maximum arises from O p and some Bi s states, while the conduction band minimum consists of Bi p states, with a wide band gap of 5.1 eV. It is argued that the Bi-O layers largely control the electronic response whereas the ferroelectric response originates mainly from the perovskite Sr-Ta-O block. Bi and Ta centered traps are calculated to be shallow, which may account in part for its excellent fatigue properties. © 1996 American Institute of Physics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:25
Last Modified: 08 Dec 2014 02:32
DOI: