CUED Publications database

Doping mechanism in tetrahedral amorphous carbon

Chen, CW and Robertson, J (1999) Doping mechanism in tetrahedral amorphous carbon. Carbon, 37. pp. 839-842. ISSN 0008-6223

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Abstract

Doping in hydrogenated amorphous silicon occurs by a process of an ionized donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favored because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:40
Last Modified: 08 Dec 2014 02:40
DOI: 10.1016/S0008-6223(98)00281-4