Robertson, J and Chen, CW (1999) Schottky barrier heights of tantalum oxide, barium strontium titanate, lead zirconate titanate and strontium bismuth tantalate. Materials Research Society Symposium - Proceedings, 541. pp. 443-448. ISSN 0272-9172Full text not available from this repository.
Schottky barrier heights of various metals on tantalum pentoxide, barium strontium titanate, lead zirconate-titanate and strontium bismuth tantalate have been calculated as a function of metal work function. These oxides have a dimensionless Schottky barrier pinning factor, S, of 0.28 - 0.4 and not close to 1, because S is controlled by the Ti-O type bonds not Sr-O type bonds, as assumed previously. Band offsets on silicon are asymmetric with much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate (BST) are relatively poor barriers to electrons on Si.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||09 Dec 2016 17:48|
|Last Modified:||27 Mar 2017 07:19|