Robertson, J and Chen, CW and Powell, MJ and Deane, SC (1998) Local hydrogen reactions of H*<inf>2</inf> in a-Si:H. Journal of Non-Crystalline Solids, 227-23. pp. 138-142. ISSN 0022-3093Full text not available from this repository.
Hydrogen rearrangements at the H*2 complex are used as a model of low energy, local transitions in the two-hydrogen density of states of hydrogenated amorphous silicon (a-Si:H). These are used to account for the low activation energy motion of H observed by nuclear magnetic resonance, the low energy defect annealing of defects formed by bias stress in thin film transistors, and the elimination of hydrogen from the growth zone during the low temperature plasma deposition of a-Si:H. © 1998 Elsevier Science B.V. All rights reserved.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||09 Dec 2016 17:17|
|Last Modified:||19 Jan 2017 03:01|