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Local hydrogen reactions of H*2 in a-Si:H

Robertson, J and Chen, CW and Powell, MJ and Deane, SC (1998) Local hydrogen reactions of H*2 in a-Si:H. Journal of Non-Crystalline Solids, 227-23. pp. 138-142. ISSN 0022-3093

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Abstract

Hydrogen rearrangements at the H*2 complex are used as a model of low energy, local transitions in the two-hydrogen density of states of hydrogenated amorphous silicon (a-Si:H). These are used to account for the low activation energy motion of H observed by nuclear magnetic resonance, the low energy defect annealing of defects formed by bias stress in thin film transistors, and the elimination of hydrogen from the growth zone during the low temperature plasma deposition of a-Si:H. © 1998 Elsevier Science B.V. All rights reserved.

Item Type: Article
Uncontrolled Keywords: Hydrogen reaction Hydrogenated amorphous silicon Two-hydrogen density of state
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 13:47
Last Modified: 04 Sep 2015 22:57
DOI: