Lu, CC and Setiadi, D and Udrea, F and Milne, WI and Covington, JA and Gardner, JW (2000) 3D thermo-electro-mechanical simulations of gas sensors based on SOI membranes. 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000. pp. 297-300.Full text not available from this repository.
3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO2-based multilayer membrane has been performed to ensure a high degree of mechanical reliability at a high operating temperature (e.g. up to 400°C). Moreover, optimisation of the layout dimensions of the SOI membrane, in particular the aspect ratio between the membrane length and membrane thickness, has been carried out to find the best trade-off between minimal device power consumption and acceptable mechanical stress.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
Div B > Electronics, Power & Energy Conversion
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||09 Dec 2016 17:30|
|Last Modified:||23 Mar 2017 03:47|