Lu, CC and Liao, KH and Udrea, F and Covington, JA and Gardner, JW (2008) Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology. Journal of Micromechanics and Microengineering, 18. ISSN 0960-1317Full text not available from this repository.
This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||18 May 2016 18:08|
|Last Modified:||30 Jul 2016 22:09|