CUED Publications database

High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining

Fritschi, R and Frédérico, S and Hibert, C and Flückiger, P and Renaud, P and Tsamados, D and Boussey, J and Chovet, A and Ng, RKM and Udrea, F and Curty, JP and Dehollain, C and Declercq, M and Ionescu, AM (2004) High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining. Microelectronic Engineering, 73-74. pp. 447-451. ISSN 0167-9317

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This paper reports the fabrication and electrical characterization of high tuning range AlSi RF MEMS capacitors. We present experimental results obtained by a surface micromachining process that uses dry etching of sacrificial amorphous silicon to release Al-1%Si membranes and has a low thermal budget (<450 °C) being compatible with CMOS post-processing. The proposed silicon sacrificial layer dry etching (SSLDE) process is able to provide very high Si etch rates (3-15 μm/min, depending on process parameters) with high Si: SiO2 selectivity (>10,000:1). Single- and double-air-gap MEMS capacitors, as well as some dedicated test structures needed to calibrate the electro-mechanical parameters and explore the reliability of the proposed technology, have been fabricated with the new process. S-parameter measurements from 100 MHz up to 2 GHz have shown a capacitance tuning range higher than 100% with the double-air-gap architecture. The tuning range can be enlarged with a proper DC electrical bias of the capacitor electrodes. Finally, the reported results make the proposed MEMS tuneable capacitor a good candidate for above-IC integration in communications applications. © 2004 Elsevier B.V. All rights reserved.

Item Type: Article
Uncontrolled Keywords: Above-IC integration High tuning range Metal surface micromachining RF MEMS tuneable capacitor Silicon sacrificial layer dry etching
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:32
Last Modified: 29 Nov 2015 09:21
DOI: 10.1016/j.mee.2004.03.015