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ELECTRONIC-PROPERTIES OF A ONE-DIMENSIONAL CHANNEL FIELD-EFFECT TRANSISTOR FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON PATTERNED GAAS

BURROUGHES, JH and LEADBEATER, ML and GRIMSHAW, MP and EVANS, RJ and RITCHIE, DA and JONES, GAC and PEPPER, M (1993) ELECTRONIC-PROPERTIES OF A ONE-DIMENSIONAL CHANNEL FIELD-EFFECT TRANSISTOR FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON PATTERNED GAAS. APPL PHYS LETT, 63. pp. 2219-2221. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: WIRE STRUCTURES SCATTERING GAS
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:05
Last Modified: 18 Nov 2017 22:09
DOI: