CUED Publications database

Cross-sectional structure of tetrahedral amorphous carbon thin films

Davis, CA and Knowles, KM and Amaratunga, GAJ (1995) Cross-sectional structure of tetrahedral amorphous carbon thin films. Surface and Coatings Technology, 76-77. pp. 316-321. ISSN 0257-8972

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Abstract

A cross-sectional transmission electron microscope study of the low density layers at the surface and at the substrate-film interface of tetrahedral amorphous carbon (ta-C) films grown on (001) silicon substrates is presented. Spatially resolved electron energy loss spectroscopy is used to determine the bonding and composition of a tetrahedral amorphous carbon film with nanometre spatial resolution. For a ta-C film grown with a substrate bias of -300 V, an interfacial region approximately 5 nm wide is present in which the carbon is sp2 bonded and is mixed with silicon and oxygen from the substrate. An sp2 bonded layer observed at the surface of the film is 1.3 ± 0.3 nm thick and contains no detectable impurities. It is argued that the sp2 bonded surface layer is intrinsic to the growth process, but that the sp2 bonding in the interfacial layer at the substrate may be related to the presence of oxygen from the substrate.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:00
Last Modified: 27 Nov 2014 19:25
DOI: 10.1016/0257-8972(95)02553-7