CUED Publications database

Cross-sectional structure of tetrahedral amorphous carbon thin films

Davis, CA and Knowles, KM and Amaratunga, GAJ (1995) Cross-sectional structure of tetrahedral amorphous carbon thin films. Surface and Coatings Technology, 76-77. pp. 316-321. ISSN 0257-8972

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Abstract

A cross-sectional transmission electron microscope study of the low density layers at the surface and at the substrate-film interface of tetrahedral amorphous carbon (ta-C) films grown on (001) silicon substrates is presented. Spatially resolved electron energy loss spectroscopy is used to determine the bonding and composition of a tetrahedral amorphous carbon film with nanometre spatial resolution. For a ta-C film grown with a substrate bias of − 300 V, an interfacial region approximately 5 nm wide is present in which the carbon is sp 2 bonded and is mixed with silicon and oxygen from the substrate. An sp 2 bonded layer observed at the surface of the film is 1.3 ± 0.3 nm thick and contains no detectable impurities. It is argued that the sp 2 bonded surface layer is intrinsic to the growth process, but that the sp 2 bonding in the interfacial layer at the substrate may be related to the presence of oxygen from the substrate. © 1995, All rights reserved.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:53
Last Modified: 03 Aug 2017 03:20
DOI: