Chu, DP and Chu, DP and Zhang, ZG and Migliorato, P and McGregor, BM and McGregor, BM and Ohashi, K and Hasegawa, K and Shimoda, T (2002) Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films. Applied Physics Letters, 81. pp. 5204-5206. ISSN 0003-6951Full text not available from this repository.
Thickness of the near-interface regions (NIR) and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films were investigated. A method to separate the low-resistive near-interface regions (NIRs) from the high-resistive central bulk region (CBR) in ferroelectric thin films was presented. Results showed that the thickness of the NIRs depended on the electrode materials in use and the CBR resistivity depended on the impurity doping levels.
|Divisions:||Div B > Photonics|
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|Date Deposited:||16 Jul 2015 13:48|
|Last Modified:||28 Jul 2015 22:25|