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Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

Chu, DP and Zhang, ZG and Migliorato, P and McGregor, BM and Ohashi, K and Hasegawa, K and Shimoda, T (2002) Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films. Applied Physics Letters, 81. pp. 5204-5206. ISSN 0003-6951

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Abstract

Thickness of the near-interface regions (NIR) and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films were investigated. A method to separate the low-resistive near-interface regions (NIRs) from the high-resistive central bulk region (CBR) in ferroelectric thin films was presented. Results showed that the thickness of the NIRs depended on the electrode materials in use and the CBR resistivity depended on the impurity doping levels.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:26
Last Modified: 27 Nov 2014 19:25
DOI: 10.1063/1.1532548