Clough, FJ and Brown, AO and Madathil, SNE and Milne, WI (1995) Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications. Thin Solid Films, 270. pp. 517-521. ISSN 0040-6090Full text not available from this repository.
This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH 4), nitrous oxide (N 2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N 2O SiH 4 gas ratio. By varying the N 2O SiH 4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10 -7Ω -1cm -1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.
|Uncontrolled Keywords:||Amorphous materials Annealing Electrical properties and measurements Plasma processing and deposition|
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:44|
|Last Modified:||27 Nov 2014 19:25|