CUED Publications database

Mobility (10(6) cm(2) V-1 s(-1)) of 2DEGs, 30 nm from ex situ patterned GaAs regrowth interfaces

Burke, TM and Ritchie, DA and Linfield, EH and O'Sullivan, MP and Burroughes, JH and Leadbeater, ML and Holmes, SN and Norman, CE and Shields, AJ (1998) Mobility (10(6) cm(2) V-1 s(-1)) of 2DEGs, 30 nm from ex situ patterned GaAs regrowth interfaces. In: UNSPECIFIED pp. 202-206..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: regrowth 2DEG hydrogen decontamination BEAM EPITAXIAL REGROWTH ATOMIC-HYDROGEN CONFINEMENT SUBSTRATE
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:25
Last Modified: 08 Aug 2017 01:52
DOI: