CUED Publications database

Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon

Ferrari, AC and Kleinsorge, B and Morrison, NA and Hart, A and Stolojan, V and Robertson, J (1999) Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon. Journal of Applied Physics, 85. pp. 7191-7197. ISSN 0021-8979

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Abstract

A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon (ta-C) on Si has been carried out. Complete stress relief occurs at 600-700°C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing in vacuum converts sp3 sites to sp2 with a drastic change occurring after 1100°C. The field emitting behavior is substantially retained up to the complete stress relief, confirming that ta-C is a robust emitting material. © 1999 American Institute of Physics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:21
Last Modified: 14 Dec 2014 06:45
DOI: