Ferrari, AC and Kleinsorge, B and Morrison, NA and Hart, A and Stolojan, V and Robertson, J (1999) Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon. Journal of Applied Physics, 85. pp. 7191-7197. ISSN 0021-8979Full text not available from this repository.
A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon (ta-C) on Si has been carried out. Complete stress relief occurs at 600-700°C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing in vacuum converts sp3 sites to sp2 with a drastic change occurring after 1100°C. The field emitting behavior is substantially retained up to the complete stress relief, confirming that ta-C is a robust emitting material. © 1999 American Institute of Physics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 12:41|
|Last Modified:||29 Apr 2016 03:24|