CUED Publications database

High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source

Morrison, NA and Rodil, SE and Ferrari, AC and Robertson, J and Milne, WI (1999) High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source. Thin Solid Films, 337. pp. 71-73. ISSN 0040-6090

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Abstract

A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 1.5 nm/s over a 4-inch diameter and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized as having an sp3 content of up to 77%, plasmon energy of 27 eV, refractive index of 2.45, hydrogen content of about 30%, optical gap of up to 2.1 eV and RMS surface roughness of 0.04 nm. © 1999 Elsevier Science S.A. All rights reserved.

Item Type: Article
Uncontrolled Keywords: Electron cyclotron wave resonance High rate deposition Tetrahedral amorphous carbon
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:42
Last Modified: 08 Dec 2014 02:27
DOI: