CUED Publications database

High rate deposition of Ta-C:H using an electron cyclotron wave resonance plasma source

Morrison, NA and Muhl, S and Rodil, SE and Milne, WI and Robertson, J and Weiler, M and Wang, PZ and Hutchings, I and Stolojan, V and Brown, LM (1997) High rate deposition of Ta-C:H using an electron cyclotron wave resonance plasma source. Materials Research Society Symposium - Proceedings, 498. pp. 147-152. ISSN 0272-9172

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Abstract

A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 900 angstrom/min and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its bonding, stress and friction coefficient. The results indicated that the ta-C:H produced using this source fulfills the necessary requirements for applications requiring enhanced tribological performance.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div E > Production Processes
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:55
Last Modified: 26 Nov 2014 19:06
DOI: