Morrison, NA and Muhl, S and Rodil, SE and Milne, WI and Robertson, J and Weiler, M and Wang, PZ and Hutchings, I and Stolojan, V and Brown, LM (1997) High rate deposition of Ta-C:H using an electron cyclotron wave resonance plasma source. Materials Research Society Symposium - Proceedings, 498. pp. 147-152. ISSN 0272-9172Full text not available from this repository.
A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 900 angstrom/min and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its bonding, stress and friction coefficient. The results indicated that the ta-C:H produced using this source fulfills the necessary requirements for applications requiring enhanced tribological performance.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
Div E > Production Processes
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||15 Dec 2015 12:41|
|Last Modified:||04 May 2016 22:26|