CUED Publications database

Amorphous carbon-silicon alloys prepared by a high plasma density source

Ferrari, AC and Racine, B and Morrison, NA and Hutchings, I and Milne, WI and Robertson, J (2000) Amorphous carbon-silicon alloys prepared by a high plasma density source. Materials Research Society Symposium - Proceedings, 593. pp. 523-528. ISSN 0272-9172

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The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-C 1-x Si x :H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-C 1-x Si x :H alloys with a good optical transparency and a band gap over 2 eV.

Item Type: Article
Divisions: Div E > Production Processes
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:04
Last Modified: 19 Apr 2018 02:36