Ferrari, AC and Racine, B and Racine, B and Morrison, NA and Hutchings, I and Milne, WI and Robertson, J (2000) Amorphous carbon-silicon alloys prepared by a high plasma density source. Materials Research Society Symposium - Proceedings, 593. pp. 523-528. ISSN 0272-9172Full text not available from this repository.
The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-C1-xSix:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-C1-xSix:H alloys with a good optical transparency and a band gap over 2 eV.
|Divisions:||Div E > Production Processes|
|Depositing User:||Cron job|
|Date Deposited:||16 Jul 2015 13:15|
|Last Modified:||03 Aug 2015 06:54|