CUED Publications database

Ultra-low on-resistance high voltage (> 600 V) SOI MOSFET with a reduced cell pitch

Luo, XR and Yao, GL and Chen, X and Wang, Q and Ge, R and Udrea, F (2011) Ultra-low on-resistance high voltage (> 600 V) SOI MOSFET with a reduced cell pitch. CHINESE PHYS B, 20. -. ISSN 1674-1056

Full text not available from this repository.
Item Type: Article
Uncontrolled Keywords: silicon-on-insulator electric field breakdown voltage trench gate trench BREAKDOWN VOLTAGE BURIED LAYER DEVICES TRENCH
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:40
Last Modified: 16 Jun 2014 01:10
DOI: 10.1088/1674-1056/20/2/028501