Luo, XR and Yao, GL and Chen, X and Wang, Q and Ge, R and Udrea, F (2011) Ultra-low on-resistance high voltage (> 600 V) SOI MOSFET with a reduced cell pitch. CHINESE PHYS B, 20. -. ISSN 1674-1056
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | silicon-on-insulator electric field breakdown voltage trench gate trench BREAKDOWN VOLTAGE BURIED LAYER DEVICES TRENCH |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 08 Nov 2011 12:46 |
| Last Modified: | 25 May 2013 19:00 |
| DOI: | 10.1088/1674-1056/20/2/028501 |
Actions (login required)
| View Item |
