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Persistent photoconductivity in Hf-In-Zn-O thin film transistors

Ghaffarzadeh, K and Nathan, A and Robertson, J and Kim, S and Jeon, S and Kim, C and Chung, UI and Lee, JH (2010) Persistent photoconductivity in Hf-In-Zn-O thin film transistors. Applied Physics Letters, 97. ISSN 0003-6951

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Passivated Hf-In-Zn-O (HIZO) thin film transistors suffer from a negative threshold voltage shift under visible light stress due to persistent photoconductivity (PPC). Ionization of oxygen vacancy sites is identified as the origin of the PPC following observations of its temperature- and wavelength-dependence. This is further corroborated by the photoluminescence spectrum of the HIZO. We also show that the gate voltage can control the decay of PPC in the dark, giving rise to a memory action. © 2010 American Institute of Physics.

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:18
Last Modified: 10 Apr 2021 22:53
DOI: 10.1063/1.3496029