Piscanec, S and Ferrari, AC and Cantoro, M and Hofmann, S and Zapien, JA and Lifshitz, Y and Lee, ST and Robertson, J (2003) Raman Spectrum of silicon nanowires. Materials Science and Engineering C, 23. pp. 931-934. ISSN 0928-4931Full text not available from this repository.
We measure the effects of phonon confinement on the Raman spectra of silicon nanowires (SiNWs). We show how previous reports of phonon confinement in SiNWs and nanostructures are actually inconsistent with phonon confinement, but are due to the intense local heating caused by the laser power used for Raman measurements. This is peculiar to nanostructures, and would require orders of magnitude higher power in bulk Si. By varying the temperature, power and excitation energy, we identify the contributions of pure confinement, heating and carrier photo-excitation. After eliminating laser-related effects, the Raman spectra show confinement signatures typical of quantum wires. © 2003 Elsevier B.V. All rights reserved.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 13:28|
|Last Modified:||05 May 2016 09:09|