Teh, AS and Lee, SB and Teo, KBK and Chhowalla, M and Milne, WI and Hasko, DG and Ahmed, H and Amaratunga, GAJ (2003) Lateral field emitters fabricated using carbon nanotubes. Microelectronic Engineering, 67-68. pp. 789-796. ISSN 0167-9317Full text not available from this repository.
We report on the fabrication of lateral emitters using carbon nanotubes (CNTs) grown via plasma enhanced chemical vapour deposition (PECVD). Carbon nanotubes are dispersed randomly onto a substrate, mapped, contacted with metal, and by etching the substrate, a suspended lateral emitter structure is formed. Field emission measurements from the lateral emitters show a turn-on voltage as low as 12 V. The emission characteristics showed good fits to the Fowler-Nordheim (FN) theory indicating that conventional field emission was indeed observed from these devices. © 2003 Elsevier Science B.V. All rights reserved.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||15 Dec 2015 13:14|
|Last Modified:||13 Feb 2016 22:28|