CUED Publications database

Fabrication of carbon nanotube lateral field emitters

Lee, SB and Teh, AS and Teo, KBK and Chhowalla, M and Hasko, DG and Milne, WI and Amaratunga, GAJ and Ahmed, H (2003) Fabrication of carbon nanotube lateral field emitters. Nanotechnology, 14. pp. 192-195. ISSN 0957-4484

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We report on the fabrication and field emission of carbon nanotube lateral field emitters. Due to its high aspect ratio and mechanical strength, we use vertically aligned multi-wall carbon nanotubes prepared by plasma-enhanced chemical vapour deposition as cathodes, which makes the fabrication of cantilever type lateral field emitters possible. The emission characteristics show that the field emission initiates at 11-17 V. The device has high geometrical enhancement factors (9.3 × 10 cm ) compared to standard Spindt tips, which may be due to increased field concentration at the nanotube tip and the close proximity of the anode (<1 μm). The relative ease of fabrication compared to vertical field emitters and enhanced field emission characteristics observed makes the carbon nanotube lateral field emitter a good candidate for future integrated nano-electronic devices. 6 -1

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:28
Last Modified: 10 Apr 2021 00:25
DOI: 10.1088/0957-4484/14/2/318